Intel
Intel 670P Series M.2 2280 512Gb Pcie Nvme 3.0 X4 Qlc Internal Solid State Drive (Ssd) Ssdpeknu512Gzx1
Intel 670P Series M.2 2280 512Gb Pcie Nvme 3.0 X4 Qlc Internal Solid State Drive (Ssd) Ssdpeknu512Gzx1
SKU:SSDPEKNU512GZX1
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Description :
- M.2 2280
- 512GB
- PCIe 3.0 x4, NVMe
The next level of performance and storage responsiveness.
The new Intel SSD 670p. Paving the way for everyday computing and mainstream gaming.
Next gen QLC NAND SSD brings improved performance, storage responsiveness, and endurance with high capacity.
Intel QLC technology and industry leadership brings the performance and capacity needed for today’s PC storage needs, including performance storage and the ability to manage high volumes of data. Now available is the Intel SSD 670p 144-layer QLC-based Client SSD.
Performance, endurance and capacity—all in a single, affordable
PC drive
With up to 2TB capacity on a single drive, the Intel SSD 670p offers great value for everyday computing, optimized productivity and mainstream gaming. The thin M.2 80mm form factor is powered by Intel’s innovative QLC technology and perfect for notebooks, desktops and mobile devices.
The Intel SSD 670p includes the latest QLC technology with numerous performance improvements, including nearly 2x sequential read and a 20% endurance improvement compared to the previous gen Intel QLC 3D NAND SSD.1 Now, a capacity-optimized SSD with NVMe (or PCIe) performance offers the right balance for everyday computing needs.
Intel QLC 3D NAND technology: storage with Intel innovation
Intel QLC Technology offers performance, high capacities, quality and reliability. The innovative floating gate architecture has tight, symmetrical layers and no cell overhead. Additionally, this dynamic architecture changes cell configuration to meet customer demands for storage capacity and performance. The result is high capacity storage at an affordable price to accelerate SSD adoption.
| FEATURES-AT-A-GLANCE | |
|---|---|
| MODEL | Intel SSD 670p |
| Capacity and Form Factor | 80mm (single-sided) 2280-S3-M 512GB, 1TB, 2TB |
| Interface | PCIe 3.0x4, NVMe |
| Media | 144-layer, Intel 3D NAND |
| Performance | Sequential Read: Up to 3,500 MB/s; Sequential Write: Up to 2,700 MB/s |
| Random 4KB Reads: Up to 310K IOPS; Random 4KB Writes: Up to 340K IOPS | |
| Endurance | 512GB: 185 TBW 1TB: 370 TBW 2TB: 740 TBW TBW=Terabytes written |
| Power | Active: 80mW, Idle: 25mW |
| Operating Temperature | 0 °C to 70 °C |
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