Description
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Description :
- Form Factor: M.2 2280
- Interface: PCI-Express 3.0 x4, NVMe 1.3
- Total Capacity: 1TB
- 1600TBW
- Sequential Read Speed: up to 2500 MB/s
- Sequential Write speed: up to 2100 MB/s
- HMB (Host Memory Buffer) supported
- TRIM & S.M.A.R.T supported
Brand | GIGABYTE |
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Model | GP-GSM2NE3100TNTD |
Device Type | Internal Solid State Drive (SSD) |
Used For | Consumer |
Form Factor | M.2 2280 |
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Capacity | 1TB |
Interface | PCI-Express 3.0 x4, NVMe 1.3 |
Max Sequential Read | Up to 2500 MBps |
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Max Sequential Write | Up to 2100 MBps |
4KB Random Read | Up to 295,000 IOPS |
4KB Random Write | Up to 430,000 IOPS |
MTBF | 1,500,000 hours |
Power Consumption (Idle) | 2.1 mW |
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Power Consumption (Active) | Avg. read: 3.5W; Write: 3.3W |
Operating Temperature | 0°C ~ +70°C |
Storage Temperature | -40°C ~ +85°C |
Height | 2.30mm |
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Width | 22.00mm |
Depth | 80.00mm |
Date First Available | April 30, 2021 |
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